Infineon Technologies IPTG111N20NM3FDATMA1

安装类型

表面贴装

包装/外壳

8-PowerSMD, Gull Wing

引脚数

8

供应商器件包装

PG-HSOG-8-1

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

10.8A (Ta), 108A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 267μA

Power Dissipation (Max)

3.8W (Ta), 375W (Tc)

Base Product Number

IPTG111N

Continuous Drain Current Id

108

Number of Elements per Chip

1

Package Type

PG HSOG-8 (TOLG)

Channel Mode

Enhancement

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

200 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

375 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

65 nC

Rds On - Drain-Source Resistance

11.1 mOhms

Id - Continuous Drain Current

108 A

操作温度

-55°C ~ 175°C (TJ)

通道数量

1 Channel

功率耗散

375

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

11.1mOhm @ 96A, 10V

输入电容(Ciss)(Max)@Vds

7000 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

81 nC @ 10 V

漏源电压 (Vdss)

200 V

Vgs（最大值）

±20V

信道型

N

场效应管特性

-