Infineon Technologies IPW60R045CPXK

包装/外壳

TO-247-3

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

600 V

Id - Continuous Drain Current

60 A

Rds On - Drain-Source Resistance

40 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Qg - Gate Charge

190 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

431 W

Channel Mode

Enhancement

Tradename

CoolMOS

Fall Time

10 ns

Factory Pack QuantityFactory Pack Quantity

240

Typical Turn-Off Delay Time

100 ns

Typical Turn-On Delay Time

30 ns

Part # Aliases

SP000067149 IPW60R045CP IPW60R045CPFKSA1

Unit Weight

0.211644 oz

系列

CoolMOS CE

包装

Tube

配置

Single

通道数量

1 Channel

上升时间

20 ns

晶体管类型

1 N-Channel

高度

21.1 mm

长度

16.13 mm

宽度

5.21 mm