Infineon Technologies IPW65R125CFD7XKSA1

安装类型

通孔

包装/外壳

TO-247-3

引脚数

3

供应商器件包装

PG-TO247-3

Current - Continuous Drain (Id) @ 25℃

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.5V @ 420μA

Power Dissipation (Max)

98W (Tc)

Base Product Number

IPW65R

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Number of Elements per Chip

1

Package Type

TO-247

Qualification

-

Continuous Drain Current Id

19A

Vds - Drain-Source Breakdown Voltage

700 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

98 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

240

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IPW65R125CFD7 SP005413372

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

36 nC

Rds On - Drain-Source Resistance

125 mOhms

RoHS

Details

Id - Continuous Drain Current

19 A

操作温度

-55°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

功率耗散

98W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

125mOhm @ 8.5A, 10V

输入电容(Ciss)(Max)@Vds

1694 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

36 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET