Infineon Technologies IPW65R230CFD7AXKSA1

包装/外壳

TO-247-3

安装类型

通孔

供应商器件包装

PG-TO247-3

Power Dissipation (Max)

63W (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

11A (Tc)

Product Status

活跃

厂商

Infineon Technologies

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

19 ns

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

63 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

240

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IPW65R230CFD7A SP003793176

Id - Continuous Drain Current

11 A

Typical Turn-Off Delay Time

80 ns

RoHS

Details

Rds On - Drain-Source Resistance

230 mOhms

Qg - Gate Charge

23 nC

Brand

Infineon Technologies

Manufacturer

Infineon

操作温度

-40°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

230mOhm @ 5.2A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 260μA

输入电容(Ciss)(Max)@Vds

1044 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

23 nC @ 10 V

上升时间

13 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET