Infineon Technologies IPZA65R018CFD7XKSA1

安装类型

通孔

包装/外壳

TO-247-4

引脚数

4

供应商器件包装

PG-TO247-4-3

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

106A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.5V @ 2.91mA

Power Dissipation (Max)

446W (Tc)

Base Product Number

IPZA65R

Number of Elements per Chip

1

Package Type

TO-247-4

Qualification

-

Continuous Drain Current Id

106A

Id - Continuous Drain Current

106 A

RoHS

Details

Rds On - Drain-Source Resistance

18 mOhms

Qg - Gate Charge

234 nC

Brand

Infineon Technologies

Manufacturer

Infineon

Part # Aliases

IPZA65R018CFD7 SP005413354

Channel Mode

Enhancement

Mounting Styles

通孔

Factory Pack QuantityFactory Pack Quantity

240

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

446 W

Vgs th - Gate-Source Threshold Voltage

4.5 V

Vds - Drain-Source Breakdown Voltage

700 V

操作温度

-55°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

功率耗散

446W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

18mOhm @ 58.2A, 10V

输入电容(Ciss)(Max)@Vds

11660 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

234 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET