Infineon Technologies IQE006NE2LM5ATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

引脚数

8

供应商器件包装

PG-TSON-8-4

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

41A (Ta), 298A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 250μA

Power Dissipation (Max)

2.1W (Ta), 89W (Tc)

Base Product Number

IQE006

Continuous Drain Current Id

298

Number of Elements per Chip

1

Package Type

PQFN 3 x 3

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

25 V

Typical Turn-On Delay Time

5.3 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

89 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 16 V, + 16 V

Unit Weight

0.000705 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

220 S

Channel Mode

Enhancement

Part # Aliases

IQE006NE2LM5 SP002434946

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

28.5 nC

Tradename

OptiMOS

Rds On - Drain-Source Resistance

650 uOhms

RoHS

Details

Typical Turn-Off Delay Time

27 ns

Id - Continuous Drain Current

298 A

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

89

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

650mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

5453 pF @ 12 V

门极电荷(Qg)(最大)@Vgs

82.1 nC @ 10 V

上升时间

2.6 ns

漏源电压 (Vdss)

25 V

Vgs（最大值）

±16V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET