INFINEON TECHNOLOGIES IRFHM6342TR2PBF
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IRFHM6342TR2PBF
1211-IRFHM6342TR2PBF
晶体管 - FET,MOSFET - 单个
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Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.1W; PQFN2X2
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IRFHM6342TR2PBF详情
INFINEON TECHNOLOGIES IRFHM6342TR2PBF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
30V
Drain current
8.5A
Case
PQFN2X2
Gate-source voltage
±12V
Mounting
SMD
Kind of channel
enhanced
Features of semiconductor devices
logic level
Gross weight
32.5mg
Certificates
RoHS compliant
Power dissipation
2.1W
Gate charge
11nC
On-state resistance
15.5mΩ
IRFHM6342TR2PBF拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







哦! 它是空的。