Infineon Technologies IRFP4468PBFXKMA1

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247AC

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

290A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

520W (Tc)

Factory Pack QuantityFactory Pack Quantity

400

Part # Aliases

IRFP4468PBF SP005732695

Manufacturer

Infineon

Brand

Infineon Technologies

RoHS

Details

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

520 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

360 nC

Rds On - Drain-Source Resistance

2.6 mOhms

Id - Continuous Drain Current

290 A

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.6mOhm @ 180A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250μA

输入电容(Ciss)(Max)@Vds

19860 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

540 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET