Infineon Technologies IRL40S212ARMA1

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

PG-TO263-3

厂商

Infineon Technologies

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

195A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

231W (Tc)

Base Product Number

IRL40S212

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

231 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

25600

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IRL40S212 SP005417006

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

91 nC

Rds On - Drain-Source Resistance

1.5 mOhms

RoHS

Details

Id - Continuous Drain Current

254 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.9mOhm @ 100A, 10V

不同 Id 时 Vgs(th)（最大值）

2.4V @ 150μA

输入电容(Ciss)(Max)@Vds

8320 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

137 nC @ 4.5 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET