Infineon Technologies ISC009N06LM5ATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PG-TSON-8-3

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

41A (Ta), 348A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.3V @ 147μA

Power Dissipation (Max)

3W (Ta), 214W (Tc)

Base Product Number

ISC009N

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

348A

Id - Continuous Drain Current

348 A

Rds On - Drain-Source Resistance

900 uOhms

Qg - Gate Charge

77 nC

Brand

Infineon Technologies

Manufacturer

Infineon

Part # Aliases

ISC009N06LM5 SP005400730

Channel Mode

Enhancement

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

5000

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 175 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

214 W

Vgs th - Gate-Source Threshold Voltage

2.3 V

Vds - Drain-Source Breakdown Voltage

60 V

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

214W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

0.9mOhm @ 50A, 10V

输入电容(Ciss)(Max)@Vds

13000 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

209 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET