Infineon Technologies ISC011N06LM5ATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

引脚数

8

供应商器件包装

PG-TDSON-8-17

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

37A (Ta), 288A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.3V @ 116μA

Power Dissipation (Max)

3W (Ta), 188W (Tc)

Base Product Number

ISC011N

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

288A

Number of Elements per Chip

1

Package Type

SuperSO8 5 x 6

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

2.3 V

Pd - Power Dissipation

188 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Part # Aliases

ISC011N06LM5 SP005400954

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

63 nC

Rds On - Drain-Source Resistance

1.15 mOhms

Id - Continuous Drain Current

288 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

188W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.15mOhm @ 50A, 10V

输入电容(Ciss)(Max)@Vds

11000 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

170 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET