Infineon Technologies ISC019N04NM5ATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

引脚数

8

供应商器件包装

PG-TDSON-8 FL

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

29A (Ta), 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.4V @ 50μA

Power Dissipation (Max)

3W (Ta), 100W (Tc)

Base Product Number

ISC019N

Continuous Drain Current Id

170

Number of Elements per Chip

1

Package Type

TDSON-8 FL

Qualification

-

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

100 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Id - Continuous Drain Current

170 A

Rds On - Drain-Source Resistance

1.9 mOhms

Qg - Gate Charge

42 nC

Channel Mode

Enhancement

Mounting Styles

SMD/SMT

Minimum Operating Temperature

- 55 C

操作温度

-55°C ~ 175°C (TJ)

通道数量

1 Channel

功率耗散

100

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.9mOhm @ 50A, 10V

输入电容(Ciss)(Max)@Vds

3900 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

55 nC @ 10 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

信道型

N

场效应管特性

-