Infineon Technologies ISC030N10NM6ATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

引脚数

8

供应商器件包装

PG-TDSON-8 FL

Power Dissipation (Max)

3W (Ta), 208W (Tc)

Base Product Number

ISC030N

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

21A (Ta), 179A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.3V @ 109μA

Continuous Drain Current Id

179

MSL

MSL 1 - Unlimited

Qualification

-

Number of Elements per Chip

1

Package Type

TDSON

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

3.3 V

Pd - Power Dissipation

208 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

ISC030N10NM6 SP005427072

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

55 nC

Rds On - Drain-Source Resistance

3 mOhms

RoHS

Details

Id - Continuous Drain Current

179 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

208

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3mOhm @ 50A, 10V

输入电容(Ciss)(Max)@Vds

5200 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

69 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品

MOSFET

产品类别

MOSFET