Infineon Technologies ISC037N03L5ISATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

引脚数

8

供应商器件包装

PG-TDSON-8-6

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

20A (Ta), 78A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 250μA

Power Dissipation (Max)

2.5W (Ta), 37W (Tc)

Base Product Number

ISC037

Continuous Drain Current

20(A)

Drain-Source On-Volt

30(V)

Operating Temperature Classification

Military

Package Type

TDSON EP

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

表面贴装

Qualification

-

Continuous Drain Current Id

78A

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

1.2 V

Pd - Power Dissipation

37 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Part # Aliases

ISC037N03L5IS SP005408608

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

8.5 nC

Tradename

OptiMOS ~ StrongIRFET

Rds On - Drain-Source Resistance

3.7 mOhms

Id - Continuous Drain Current

78 A

操作温度

-55°C ~ 150°C (TJ)

包装

卷带

类型

功率MOSFET

子类别

MOSFETs

极性

N

通道数量

1 Channel

功率耗散

2.5(W)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3.7mOhm @ 30A, 10V

输入电容(Ciss)(Max)@Vds

1100 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

17 nC @ 10 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET