Infineon Technologies ISC0805NLSATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PG-TDSON-8-46

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

13A (Ta), 71A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

2.5W (Ta), 74W (Tc)

Base Product Number

ISC0805N

Continuous Drain Current Id

71

Number of Elements per Chip

1

Package Type

SuperSO8 5 x 6

Qualification

-

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

2.3 V

Pd - Power Dissipation

74 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

ISC0805NLS SP005430376

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

13 nC

Rds On - Drain-Source Resistance

7.8 mOhms

Id - Continuous Drain Current

71 A

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

引脚数量

8

通道数量

1 Channel

功率耗散

74

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

7.8mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

2.3V @ 40μA

输入电容(Ciss)(Max)@Vds

2200 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

33 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET