Infineon Technologies ISC080N10NM6ATMA1

包装/外壳

8-PowerTDFN

安装类型

表面贴装

引脚数

8

供应商器件包装

PG-TDSON-8 FL

Base Product Number

ISC080N

Power Dissipation (Max)

3W (Ta), 100W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.3V @ 36μA

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Current - Continuous Drain (Id) @ 25℃

13A (Ta), 75A (Tc)

Product Status

活跃

厂商

Infineon Technologies

Continuous Drain Current Id

75

Number of Elements per Chip

1

Package Type

TDSON

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

3.3 V

Pd - Power Dissipation

100 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

ISC080N10NM6 SP005409473

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

19 nC

Rds On - Drain-Source Resistance

8.05 mOhms

RoHS

Details

Id - Continuous Drain Current

75 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

100

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8.05mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

1800 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

24 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品

MOSFET

产品类别

MOSFET