Infineon Technologies IST006N04NM6AUMA1

安装类型

表面贴装

包装/外壳

5-PowerSFN

引脚数

5

供应商器件包装

PG-HSOF-5-1

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

58A (Ta), 475A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.3V @ 250μA

Power Dissipation (Max)

3.8W (Ta), 250W (Tc)

Base Product Number

IST006

Continuous Drain Current Id

475

Number of Elements per Chip

1

Package Type

HSOF-5

Channel Mode

Enhancement

Qualification

-

Vds - Drain-Source Breakdown Voltage

40 V

Moisture Sensitive

有

Typical Turn-On Delay Time

25 ns

Vgs th - Gate-Source Threshold Voltage

2.1 V

Pd - Power Dissipation

250 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 10 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

330 S

Part # Aliases

IST006N04NM6 SP005405153

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

127 nC

Tradename

OptiMOS

Rds On - Drain-Source Resistance

600 uOhms

RoHS

过渡中

Typical Turn-Off Delay Time

53 ns

Id - Continuous Drain Current

475 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

250

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

600mOhm @ 100A, 10V

输入电容(Ciss)(Max)@Vds

8800 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

178 nC @ 10 V

上升时间

22 ns

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel Power MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET