Infineon Technologies IST026N10NM5AUMA1

包装/外壳

5-PowerSFN

安装类型

表面贴装

供应商器件包装

PG-HSOF-5-1

Base Product Number

IST026N

Power Dissipation (Max)

3.8W (Ta), 313W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.8V @ 148μA

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Current - Continuous Drain (Id) @ 25℃

27A (Ta), 248A (Tc)

Product Status

活跃

厂商

Infineon Technologies

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

3.8 V

Pd - Power Dissipation

313 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

89 nC

Rds On - Drain-Source Resistance

2.6 mOhms

Id - Continuous Drain Current

248 A

操作温度

-55°C ~ 175°C (TJ)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.6mOhm @ 100A, 10V

输入电容(Ciss)(Max)@Vds

6300 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

125 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

场效应管特性

-