Infineon Technologies ISZ0702NLSATMA1

包装/外壳

8-PowerTDFN

安装类型

表面贴装

引脚数

8

供应商器件包装

PG-TSDSON-8-25

Base Product Number

ISZ0702N

Power Dissipation (Max)

2.5W (Ta), 65W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.3V @ 26μA

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Current - Continuous Drain (Id) @ 25℃

17A (Ta), 86A (Tc)

Product Status

活跃

厂商

Infineon Technologies

Number of Elements per Chip

1

Package Type

PQFN 3 x 3

Qualification

-

Continuous Drain Current Id

86A

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

2.3 V

Pd - Power Dissipation

65 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

ISZ0702NLS SP005417427

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

15 nC

Rds On - Drain-Source Resistance

4.5 mOhms

Id - Continuous Drain Current

86 A

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

65W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.5mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

2500 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

39 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET