Infineon Technologies S34MS02G204BHI010
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S34MS02G204BHI010
1211-S34MS02G204BHI010
存储器
BGA-63
大陆
立即发货

NAND Flash Nand
1最小包装量--
S34MS02G204BHI010详情
Infineon Technologies S34MS02G204BHI010重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-63
引脚数
63
RoHS
Details
Mounting Styles
SMD/SMT
Interface Type
Parallel
Timing Type
Asynchronous
Supply Voltage-Min
1.7 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 85 C
Active Read Current - Max
20 mA
Memory Types
NAND
Moisture Sensitive
有
Factory Pack QuantityFactory Pack Quantity
210
Supplier Package
BGA
Typical Operating Supply Voltage
1.8000 V
Minimum Operating Supply Voltage
1.7 V
ECC Support
有
Block Organization
Symmetrical
Number of Words
128 MWords
Maximum Operating Supply Voltage
1.95 V
Cell Type
SLC NAND
Mounting
表面贴装
Supply Voltage-Max
1.95 V
Usage Level
Industrial grade
系列
S34MS02G2
包装
Tray
操作温度
-40 to 85 °C
内存大小
2 Gbit
速度
45 ns
电源电流-最大值
30 mA
建筑学
Multiplane
数据总线宽度
16 bit
组织结构
128 M x 16
密度
2 Gbit
筛选水平
Industrial
编程电压
1.7, 1.95 V
引导模块
无
产品
NAND闪存
S34MS02G204BHI010拓展信息
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