Infineon Technologies SP000870646
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SP000870646
1211-SP000870646
晶体管 - FET,MOSFET - 单个
SOT-23-3
大陆
立即发货

MOSFET N-Ch 100V 190mA SOT-23-3
1最小包装量--
SP000870646详情
Infineon Technologies SP000870646重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-23-3
RoHS
Details
Mounting Styles
SMD/SMT
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - Continuous Drain Current
190 mA
Rds On - Drain-Source Resistance
6 Ohms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
800 mV
Qg - Gate Charge
600 pC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
500 mW
Channel Mode
Enhancement
Qualification
AEC-Q101
Fall Time
22 ns
Forward Transconductance - Min
410 mS
Factory Pack QuantityFactory Pack Quantity
15000
Typical Turn-Off Delay Time
7.4 ns
Typical Turn-On Delay Time
2.3 ns
Part # Aliases
BSS123NH6327XTSA1
Unit Weight
0.000282 oz
包装
MouseReel
系列
BSS123
配置
Single
通道数量
1 Channel
上升时间
3.2 ns
晶体管类型
1 N-Channel
高度
1.1 mm
长度
2.9 mm
宽度
1.3 mm
SP000870646拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
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