Infineon Technologies SP000928262

包装/外壳

TO-252-3

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

8.7 A

Rds On - Drain-Source Resistance

420 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

32 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

83.3 W

Channel Mode

Enhancement

Qualification

AEC-Q101

Tradename

CoolMOS

Factory Pack QuantityFactory Pack Quantity

2500

Part # Aliases

IPD65R420CFDAATMA1

Unit Weight

0.011640 oz

系列

CoolMOS CFDA

包装

Reel

通道数量

1 Channel

高度

2.3 mm

长度

6.5 mm

宽度

6.22 mm