Infineon Technologies SP000934750

包装/外壳

TISON-8

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

30 V

Id - Continuous Drain Current

40 A

Rds On - Drain-Source Resistance

3.8 mOhms, 2.8 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

1.2 V

Qg - Gate Charge

10 nC, 12.8 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

2.5 W

Channel Mode

Enhancement

Tradename

OptiMOS

Fall Time

3 ns, 2.2 ns

Forward Transconductance - Min

32 S, 36 S

Factory Pack QuantityFactory Pack Quantity

5000

Typical Turn-Off Delay Time

17 ns, 15 ns

Typical Turn-On Delay Time

4.7 ns, 3.3 ns

Part # Aliases

BSC0924NDIATMA1

包装

Reel

配置

Dual

通道数量

2 Channel

上升时间

3.8 ns, 2.8 ns

晶体管类型

2 N-Channel

高度

1.15 mm

长度

6 mm

宽度

5 mm