Infineon Technologies SPD07N60S5BTMA1
- 收藏
- 对比
SPD07N60S5BTMA1
1211-SPD07N60S5BTMA1
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
SPD07N60S5BTMA1详情
Infineon Technologies SPD07N60S5BTMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
安装类型
表面贴装
供应商器件包装
PG-TO252
Power Dissipation (Max)
83W (Tc)
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
5.5V @ 350μA
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25℃
7.3A (Tc)
Product Status
活跃
Package
Bulk
厂商
Infineon Technologies
操作温度
-55°C ~ 150°C (TJ)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
600mOhm @ 4.6A, 10V
输入电容(Ciss)(Max)@Vds
970 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
35 nC @ 10 V
漏源电压 (Vdss)
600 V
Vgs(最大值)
±20V
场效应管特性
-
SPD07N60S5BTMA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







哦! 它是空的。