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价格梯度
内地含税价
1
¥8.591699
10
¥8.105377
100
¥7.64658
500
¥7.213756
1000
¥6.805429
Infineon Technologies SPD08P06PGXT
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SPD08P06PGXT
1211-SPD08P06PGXT
晶体管 - FET,MOSFET - 单个
TO-252-3
大陆
立即发货

MOSFET P-Ch -60V -8.8A DPAK-2
--最小包装量--
¥
总价: ¥
SPD08P06PGXT详情
Infineon Technologies SPD08P06PGXT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-252-3
RoHS
Details
Mounting Styles
SMD/SMT
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
8.83 A
Rds On - Drain-Source Resistance
230 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
13 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
42 W
Channel Mode
Enhancement
Qualification
AEC-Q101
Fall Time
14 ns
Forward Transconductance - Min
2.5 S
Factory Pack QuantityFactory Pack Quantity
2500
Typical Turn-Off Delay Time
48 ns
Typical Turn-On Delay Time
16 ns
Part # Aliases
SP000450534 SPD08P06P G SPD08P06PGBTMA1
Unit Weight
0.011640 oz
包装
MouseReel
配置
Single
通道数量
1 Channel
上升时间
46 ns
晶体管类型
1 P-Channel
高度
2.3 mm
长度
6.5 mm
宽度
6.22 mm
SPD08P06PGXT拓展信息
Infineon Technologies
Infineon Technologies
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哦! 它是空的。