Infineon Technologies SPI12N50C3IN
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SPI12N50C3IN
1211-SPI12N50C3IN
晶体管 - FET,MOSFET - 单个
TO-262-3 Long Leads, I2Pak, TO-262AA
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
SPI12N50C3IN详情
Infineon Technologies SPI12N50C3IN重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-262-3 Long Leads, I2Pak, TO-262AA
安装类型
通孔
供应商器件包装
PG-TO262-3-1
Power Dissipation (Max)
125W (Tc)
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3.9V @ 500μA
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25℃
11.6A (Tc)
Product Status
活跃
Package
Bulk
厂商
Infineon Technologies
操作温度
-55°C ~ 150°C (TJ)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
380mOhm @ 7A, 10V
输入电容(Ciss)(Max)@Vds
1200 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
49 nC @ 10 V
漏源电压 (Vdss)
500 V
Vgs(最大值)
±20V
场效应管特性
-
SPI12N50C3IN拓展信息
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