Infineon Technologies SPP02N60C3IN
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SPP02N60C3IN
1211-SPP02N60C3IN
晶体管 - FET,MOSFET - 单个
TO-220-3
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
SPP02N60C3IN详情
Infineon Technologies SPP02N60C3IN重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-220-3
供应商器件包装
PG-TO220-3-1
厂商
Infineon Technologies
Package
Bulk
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
25W (Tc)
操作温度
-55°C ~ 150°C (TJ)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
3Ohm @ 1.1A, 10V
不同 Id 时 Vgs(th)(最大值)
3.9V @ 80μA
输入电容(Ciss)(Max)@Vds
200 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
12.5 nC @ 10 V
漏源电压 (Vdss)
600 V
Vgs(最大值)
±20V
场效应管特性
-
SPP02N60C3IN拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
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Infineon Technologies
Infineon Technologies
Infineon Technologies
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