Integrated Device Technology (IDT) 6116LA35SOI
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6116LA35SOI
1179-6116LA35SOI
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6116LA35SOI datasheet pdf and Integrated Circuits (ICs) product details from Integrated Device Technology (IDT) stock available at utmel
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6116LA35SOI详情
Integrated Device Technology (IDT) 6116LA35SOI重要参数规格及、参数值,及相似型号如下:
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表面安装
YES
终端数量
24
Manufacturer Part Number
6116LA35SOI
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Package Description
SOP, SOP24,.4
Risk Rank
5.92
Access Time-Max
35 ns
Moisture Sensitivity Levels
1
Number of Words
2048 words
Number of Words Code
2000
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Code
SOP
Package Equivalence Code
SOP24,.4
Package Shape
RECTANGULAR
Package Style
小概要
Supply Voltage-Nom (Vsup)
5 V
Reflow Temperature-Max (s)
30
JESD-609代码
e0
无铅代码
无
端子表面处理
Tin/Lead (Sn/Pb)
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
225
端子间距
1.27 mm
Reach合规守则
not_compliant
JESD-30代码
R-PDSO-G24
资历状况
不合格
电源
5 V
温度等级
INDUSTRIAL
操作模式
ASYNCHRONOUS
电源电流-最大值
0.095 mA
组织结构
2KX8
输出特性
3-STATE
内存宽度
8
待机电流-最大值
0.00003 A
记忆密度
16384 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
特殊应用Sram
待机电压-最小值
2 V
6116LA35SOI拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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