Integrated Device Technology (IDT) 70121S35JGI
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70121S35JGI
1179-70121S35JGI
集成电路(IC)
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大陆
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QCCJ, LDCC52,.8SQ
1最小包装量--
70121S35JGI详情
Integrated Device Technology (IDT) 70121S35JGI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
52
Manufacturer Part Number
70121S35JGI
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Package Description
QCCJ, LDCC52,.8SQ
Risk Rank
5.26
Access Time-Max
35 ns
Moisture Sensitivity Levels
1
Number of Words
2048 words
Number of Words Code
2000
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Code
QCCJ
Package Equivalence Code
LDCC52,.8SQ
Package Shape
SQUARE
Package Style
CHIP CARRIER
Supply Voltage-Nom (Vsup)
5 V
Reflow Temperature-Max (s)
未说明
JESD-609代码
e3
端子表面处理
Matte Tin (Sn) - annealed
端子位置
QUAD
终端形式
J BEND
峰值回流焊温度(摄氏度)
未说明
功能数量
1
端子间距
1.27 mm
Reach合规守则
compliant
JESD-30代码
S-PQCC-J52
资历状况
不合格
电源电压-最大值(Vsup)
5.5 V
电源
5 V
温度等级
INDUSTRIAL
电源电压-最小值(Vsup)
4.5 V
端口的数量
2
操作模式
ASYNCHRONOUS
电源电流-最大值
0.275 mA
组织结构
2KX9
输出特性
3-STATE
内存宽度
9
待机电流-最大值
0.015 A
记忆密度
18432 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
DUAL-PORT SRAM
待机电压-最小值
2 V
70121S35JGI拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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