Integrated Device Technology (IDT) 70V657S15DRGI
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70V657S15DRGI
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70V657S15DRGI datasheet pdf and Integrated Circuits (ICs) product details from Integrated Device Technology (IDT) stock available at utmel
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70V657S15DRGI详情
Integrated Device Technology (IDT) 70V657S15DRGI重要参数规格及、参数值,及相似型号如下:
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表面安装
YES
终端数量
208
Manufacturer Part Number
70V657S15DRGI
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code
QFP
Package Description
FQFP, QFP208,1.2SQ,20
Risk Rank
5.19
Access Time-Max
15 ns
Moisture Sensitivity Levels
3
Number of Words
32768 words
Number of Words Code
32000
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Code
FQFP
Package Equivalence Code
QFP208,1.2SQ,20
Package Shape
SQUARE
Package Style
FLATPACK, FINE PITCH
Supply Voltage-Nom (Vsup)
3.3 V
Reflow Temperature-Max (s)
30
JESD-609代码
e3
无铅代码
有
ECCN 代码
3A991.B.2.A
端子表面处理
Matte Tin (Sn)
HTS代码
8542.32.00.41
端子位置
QUAD
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
0.5 mm
Reach合规守则
compliant
引脚数量
208
JESD-30代码
S-PQFP-G208
资历状况
不合格
电源电压-最大值(Vsup)
3.45 V
电源
2.5/3.3,3.3 V
温度等级
INDUSTRIAL
电源电压-最小值(Vsup)
3.15 V
端口的数量
2
操作模式
ASYNCHRONOUS
电源电流-最大值
0.49 mA
组织结构
32KX36
输出特性
3-STATE
座位高度-最大
4.1 mm
内存宽度
36
待机电流-最大值
0.015 A
记忆密度
1179648 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
DUAL-PORT SRAM
待机电压-最小值
3.15 V
长度
28 mm
宽度
28 mm
70V657S15DRGI拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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