Integrated Device Technology (IDT) 7130SA35JG8
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7130SA35JG8
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7130SA35JG8 datasheet pdf and Integrated Circuits (ICs) product details from Integrated Device Technology (IDT) stock available at utmel
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7130SA35JG8详情
Integrated Device Technology (IDT) 7130SA35JG8重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
表面安装
YES
终端数量
52
Manufacturer Part Number
7130SA35JG8
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code
LCC
Package Description
QCCJ, LDCC52,.8SQ
Risk Rank
5.04
Samacsys Description
NULL
Access Time-Max
35 ns
Moisture Sensitivity Levels
1
Number of Words
1024 words
Number of Words Code
1000
Operating Temperature-Max
70 °C
Package Body Material
PLASTIC/EPOXY
Package Code
QCCJ
Package Equivalence Code
LDCC52,.8SQ
Package Shape
SQUARE
Package Style
CHIP CARRIER
Supply Voltage-Nom (Vsup)
5 V
Reflow Temperature-Max (s)
20
JESD-609代码
e3
无铅代码
有
ECCN 代码
EAR99
端子表面处理
Matte Tin (Sn) - annealed
HTS代码
8542.32.00.41
端子位置
QUAD
终端形式
J BEND
峰值回流焊温度(摄氏度)
225
功能数量
1
端子间距
1.27 mm
Reach合规守则
compliant
引脚数量
52
JESD-30代码
S-PQCC-J52
资历状况
不合格
电源电压-最大值(Vsup)
5.5 V
电源
5 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
4.5 V
端口的数量
2
操作模式
ASYNCHRONOUS
电源电流-最大值
0.165 mA
组织结构
1KX8
输出特性
3-STATE
座位高度-最大
4.57 mm
内存宽度
8
待机电流-最大值
0.015 A
记忆密度
8192 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
DUAL-PORT SRAM
待机电压-最小值
4.5 V
长度
19.1262 mm
宽度
19.1262 mm
7130SA35JG8拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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