Integrated Device Technology (IDT) 71T75802S200PF
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71T75802S200PF
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71T75802S200PF datasheet pdf and Integrated Circuits (ICs) product details from Integrated Device Technology (IDT) stock available at utmel
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71T75802S200PF详情
Integrated Device Technology (IDT) 71T75802S200PF重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
表面安装
YES
终端数量
100
Supply Voltage-Nom (Vsup)
2.5 V
Reflow Temperature-Max (s)
未说明
Number of Words Code
1000000
Number of Words
1048576 words
Moisture Sensitivity Levels
3
Clock Frequency-Max (fCLK)
200 MHz
Access Time-Max
3.2 ns
Risk Rank
5.19
Package Description
14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100
Part Package Code
QFP
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Life Cycle Code
Obsolete
Rohs Code
无
Manufacturer Part Number
71T75802S200PF
Operating Temperature-Max
70 °C
Package Body Material
PLASTIC/EPOXY
Package Code
LQFP
Package Equivalence Code
QFP100,.63X.87
Package Shape
RECTANGULAR
Package Style
FLATPACK, LOW PROFILE
JESD-609代码
e0
ECCN 代码
3A991
端子表面处理
Tin/Lead (Sn85Pb15)
附加功能
流水线结构
HTS代码
8542.32.00.41
端子位置
QUAD
终端形式
鸥翼
峰值回流焊温度(摄氏度)
未说明
功能数量
1
端子间距
0.65 mm
Reach合规守则
not_compliant
引脚数量
100
JESD-30代码
R-PQFP-G100
资历状况
不合格
电源电压-最大值(Vsup)
2.625 V
电源
2.5 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
2.375 V
操作模式
SYNCHRONOUS
电源电流-最大值
0.275 mA
组织结构
1MX18
输出特性
3-STATE
座位高度-最大
1.6 mm
内存宽度
18
待机电流-最大值
0.04 A
记忆密度
18874368 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
ZBT SRAM
待机电压-最小值
2.38 V
宽度
14 mm
长度
20 mm
71T75802S200PF拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







哦! 它是空的。