Integrated Device Technology (IDT) 71V546XS117PFGI
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71V546XS117PFGI
1179-71V546XS117PFGI
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QFP, QFP100,.63X.87
1最小包装量--
71V546XS117PFGI详情
Integrated Device Technology (IDT) 71V546XS117PFGI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
100
Manufacturer Part Number
71V546XS117PFGI
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Package Description
QFP, QFP100,.63X.87
Risk Rank
5.58
Access Time-Max
4.5 ns
Clock Frequency-Max (fCLK)
117 MHz
Moisture Sensitivity Levels
3
Number of Words
131072 words
Number of Words Code
128000
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Code
QFP
Package Equivalence Code
QFP100,.63X.87
Package Shape
RECTANGULAR
Package Style
FLATPACK
Supply Voltage-Nom (Vsup)
3.3 V
Reflow Temperature-Max (s)
30
JESD-609代码
e3
无铅代码
有
端子表面处理
Matte Tin (Sn) - annealed
端子位置
QUAD
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
0.635 mm
Reach合规守则
compliant
JESD-30代码
R-PQFP-G100
资历状况
不合格
电源电压-最大值(Vsup)
3.465 V
电源
3.3 V
温度等级
INDUSTRIAL
电源电压-最小值(Vsup)
3.135 V
操作模式
SYNCHRONOUS
电源电流-最大值
0.285 mA
组织结构
128KX36
输出特性
3-STATE
内存宽度
36
待机电流-最大值
0.045 A
记忆密度
4718592 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
ZBT SRAM
待机电压-最小值
3.14 V
71V546XS117PFGI拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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