Integrated Device Technology (IDT) GS8662R18GE-250
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GS8662R18GE-250
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GS8662R18GE-250 datasheet pdf and Integrated Circuits (ICs) product details from Integrated Device Technology (IDT) stock available at utmel
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GS8662R18GE-250详情
Integrated Device Technology (IDT) GS8662R18GE-250重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
165
Operating Temperature-Max
70 °C
Package Body Material
PLASTIC/EPOXY
Package Code
LBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE
Supply Voltage-Nom (Vsup)
1.8 V
Reflow Temperature-Max (s)
未说明
Manufacturer Part Number
GS8662R18GE-250
Rohs Code
有
Part Life Cycle Code
Obsolete
Ihs Manufacturer
GSI TECHNOLOGY
Part Package Code
BGA
Package Description
15 MM X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
Risk Rank
5.71
Access Time-Max
0.45 ns
Moisture Sensitivity Levels
3
Number of Words
4194304 words
Number of Words Code
4000000
JESD-609代码
e1
无铅代码
有
ECCN 代码
3A991.B.2.B
端子表面处理
Tin/Silver/Copper (Sn/Ag/Cu)
附加功能
流水线结构
HTS代码
8542.32.00.41
端子位置
BOTTOM
终端形式
BALL
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
1 mm
Reach合规守则
unknown
引脚数量
165
JESD-30代码
R-PBGA-B165
资历状况
不合格
电源电压-最大值(Vsup)
1.9 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
1.7 V
操作模式
SYNCHRONOUS
组织结构
4MX18
座位高度-最大
1.5 mm
内存宽度
18
记忆密度
75497472 bit
并行/串行
PARALLEL
内存IC类型
DDR SRAM
宽度
15 mm
长度
17 mm
GS8662R18GE-250拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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