Integrated Device Technology (IDT) IDT7130LA100JG
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IDT7130LA100JG
1179-IDT7130LA100JG
集成电路(IC)
--
大陆
立即发货

QCCJ, LDCC52,.8SQ
1最小包装量--
IDT7130LA100JG详情
Integrated Device Technology (IDT) IDT7130LA100JG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
52
Manufacturer Part Number
IDT7130LA100JG
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Supply Voltage-Nom (Vsup)
5 V
Reflow Temperature-Max (s)
20
Part Package Code
LCC
Package Description
QCCJ, LDCC52,.8SQ
Risk Rank
5.06
Access Time-Max
100 ns
Moisture Sensitivity Levels
1
Number of Words
1024 words
Number of Words Code
1000
Operating Temperature-Max
70 °C
Package Body Material
PLASTIC/EPOXY
Package Code
QCCJ
Package Equivalence Code
LDCC52,.8SQ
Package Shape
SQUARE
Package Style
CHIP CARRIER
JESD-609代码
e3
无铅代码
有
ECCN 代码
EAR99
端子表面处理
Matte Tin (Sn) - annealed
HTS代码
8542.32.00.41
端子位置
QUAD
终端形式
J BEND
峰值回流焊温度(摄氏度)
225
功能数量
1
端子间距
1.27 mm
Reach合规守则
compliant
引脚数量
52
JESD-30代码
S-PQCC-J52
资历状况
不合格
电源电压-最大值(Vsup)
5.5 V
电源
5 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
4.5 V
端口的数量
2
操作模式
ASYNCHRONOUS
电源电流-最大值
0.11 mA
组织结构
1KX8
输出特性
3-STATE
座位高度-最大
4.572 mm
内存宽度
8
待机电流-最大值
0.0015 A
记忆密度
8192 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
DUAL-PORT SRAM
待机电压-最小值
2 V
宽度
19.1262 mm
长度
19.1262 mm
IDT7130LA100JG拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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