Integrated Device Technology (IDT) IDT7132LA25CB
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IDT7132LA25CB
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IDT7132LA25CB datasheet pdf and Integrated Circuits (ICs) product details from Integrated Device Technology (IDT) stock available at utmel
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IDT7132LA25CB详情
Integrated Device Technology (IDT) IDT7132LA25CB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
48
Manufacturer Part Number
IDT7132LA25CB
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code
DIP
Package Description
0.620 X 2.430 INCH, 0.150 INCH HEIGHT, SIDE BRAZED, DIP-48
Risk Rank
5.64
Access Time-Max
25 ns
Number of Words
2048 words
Number of Words Code
2000
Operating Temperature-Max
125 °C
Operating Temperature-Min
-55 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Code
DIP
Package Equivalence Code
DIP48,.6
Package Shape
RECTANGULAR
Package Style
IN-LINE
Supply Voltage-Nom (Vsup)
5 V
Reflow Temperature-Max (s)
20
Usage Level
Military grade
JESD-609代码
e0
无铅代码
无
ECCN 代码
3A001.A.2.C
端子表面处理
Tin/Lead (Sn/Pb)
附加功能
备用电池
HTS代码
8542.32.00.41
端子位置
DUAL
终端形式
THROUGH-HOLE
峰值回流焊温度(摄氏度)
225
功能数量
1
端子间距
2.54 mm
Reach合规守则
not_compliant
引脚数量
48
JESD-30代码
R-CDIP-T48
资历状况
不合格
电源电压-最大值(Vsup)
5.5 V
电源
5 V
温度等级
MILITARY
电源电压-最小值(Vsup)
4.5 V
端口的数量
2
操作模式
ASYNCHRONOUS
电源电流-最大值
0.22 mA
组织结构
2KX8
输出特性
3-STATE
座位高度-最大
4.826 mm
内存宽度
8
待机电流-最大值
0.004 A
记忆密度
16384 bit
筛选水平
MIL-PRF-38535
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
DUAL-PORT SRAM
待机电压-最小值
2 V
长度
60.96 mm
宽度
15.24 mm
IDT7132LA25CB拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







哦! 它是空的。