Integrated Device Technology (IDT) IDT7132SA35L48BG
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IDT7132SA35L48BG
1179-IDT7132SA35L48BG
集成电路(IC)
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大陆
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QCCN,
1最小包装量--
IDT7132SA35L48BG详情
Integrated Device Technology (IDT) IDT7132SA35L48BG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
48
Manufacturer Part Number
IDT7132SA35L48BG
Rohs Code
有
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code
LCC
Package Description
QCCN,
Risk Rank
5.27
Access Time-Max
35 ns
Number of Words
2048 words
Number of Words Code
2000
Operating Temperature-Max
125 °C
Operating Temperature-Min
-55 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Code
QCCN
Package Shape
SQUARE
Package Style
CHIP CARRIER
Supply Voltage-Nom (Vsup)
5 V
Reflow Temperature-Max (s)
30
Usage Level
Military grade
JESD-609代码
e3
无铅代码
有
ECCN 代码
3A001.A.2.C
端子表面处理
哑光锡
附加功能
AUTOMATIC POWER-DOWN
HTS代码
8542.32.00.41
端子位置
QUAD
终端形式
无铅
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
1.016 mm
Reach合规守则
compliant
引脚数量
48
JESD-30代码
S-CQCC-N48
资历状况
不合格
电源电压-最大值(Vsup)
5.5 V
温度等级
MILITARY
电源电压-最小值(Vsup)
4.5 V
操作模式
ASYNCHRONOUS
组织结构
2KX8
座位高度-最大
3.048 mm
内存宽度
8
记忆密度
16384 bit
筛选水平
MIL-PRF-38535
并行/串行
PARALLEL
内存IC类型
DUAL-PORT SRAM
长度
14.3002 mm
宽度
14.3002 mm
IDT7132SA35L48BG拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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