Integrated Device Technology (IDT) IDT71V3576S150BGI
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IDT71V3576S150BGI
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IDT71V3576S150BGI datasheet pdf and Integrated Circuits (ICs) product details from Integrated Device Technology (IDT) stock available at utmel
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IDT71V3576S150BGI详情
Integrated Device Technology (IDT) IDT71V3576S150BGI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
119
Manufacturer Part Number
IDT71V3576S150BGI
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code
BGA
Package Description
BGA-119
Risk Rank
5.76
Access Time-Max
3.8 ns
Clock Frequency-Max (fCLK)
150 MHz
Moisture Sensitivity Levels
3
Number of Words
131072 words
Number of Words Code
128000
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Code
BGA
Package Equivalence Code
BGA119,7X17,50
Package Shape
RECTANGULAR
Package Style
网格排列
Supply Voltage-Nom (Vsup)
3.3 V
Reflow Temperature-Max (s)
未说明
JESD-609代码
e0
ECCN 代码
3A991.B.2.A
端子表面处理
Tin/Lead (Sn63Pb37)
附加功能
流水线结构
HTS代码
8542.32.00.41
端子位置
BOTTOM
终端形式
BALL
峰值回流焊温度(摄氏度)
未说明
功能数量
1
端子间距
1.27 mm
Reach合规守则
not_compliant
引脚数量
119
JESD-30代码
R-PBGA-B119
资历状况
不合格
电源电压-最大值(Vsup)
3.465 V
电源
3.3 V
温度等级
INDUSTRIAL
电源电压-最小值(Vsup)
3.135 V
操作模式
SYNCHRONOUS
电源电流-最大值
0.305 mA
组织结构
128KX36
输出特性
3-STATE
座位高度-最大
2.36 mm
内存宽度
36
待机电流-最大值
0.035 A
记忆密度
4718592 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
缓存SRAM
待机电压-最小值
3.14 V
长度
22 mm
宽度
14 mm
IDT71V3576S150BGI拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







哦! 它是空的。