Integrated Silicon Solution, Inc. (ISSI) IS61S6432-6TQ
- 收藏
- 对比
IS61S6432-6TQ
1266-IS61S6432-6TQ
集成电路(IC)
--
大陆
立即发货

IS61S6432-6TQ datasheet pdf and Integrated Circuits (ICs) product details from Integrated Silicon Solution, Inc. (ISSI) stock available at utmel
1最小包装量--
IS61S6432-6TQ详情
Integrated Silicon Solution, Inc. (ISSI) IS61S6432-6TQ重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
100
Package Code
LQFP
Package Equivalence Code
QFP100,.63X.87
Package Shape
RECTANGULAR
Package Style
FLATPACK, LOW PROFILE
Supply Voltage-Nom (Vsup)
3.3 V
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
70 °C
Number of Words Code
64000
Number of Words
65536 words
Clock Frequency-Max (fCLK)
83 MHz
Access Time-Max
6 ns
Risk Rank
5.83
Package Description
TQFP-100
Part Package Code
QFP
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Part Life Cycle Code
Obsolete
Rohs Code
无
Manufacturer Part Number
IS61S6432-6TQ
JESD-609代码
e0
ECCN 代码
3A991.B.2.A
端子表面处理
Tin/Lead (Sn/Pb)
HTS代码
8542.32.00.41
端子位置
QUAD
终端形式
鸥翼
功能数量
1
端子间距
0.65 mm
Reach合规守则
unknown
引脚数量
100
JESD-30代码
R-PQFP-G100
资历状况
不合格
电源电压-最大值(Vsup)
3.63 V
电源
3.3 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
3.135 V
端口的数量
1
操作模式
SYNCHRONOUS
电源电流-最大值
0.165 mA
组织结构
64KX32
输出特性
3-STATE
座位高度-最大
1.6 mm
内存宽度
32
待机电流-最大值
0.005 A
记忆密度
2097152 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
缓存SRAM
待机电压-最小值
3.14 V
输出启用
YES
宽度
14 mm
长度
20 mm
IS61S6432-6TQ拓展信息
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)
Integrated Silicon Solution, Inc. (ISSI)







哦! 它是空的。