Intersil HUF75309D3

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

Drain Current-Max (ID)

17 A

Risk Rank

5.3

Ihs Manufacturer

ROCHESTER ELECTRONICS LLC

Part Life Cycle Code

活跃

Number of Elements

1

Manufacturer

Rochester Electronics LLC

Package Shape

RECTANGULAR

Manufacturer Part Number

HUF75309D3

Package Body Material

PLASTIC/EPOXY

Package Style

IN-LINE

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

unknown

JESD-30代码

R-PSIP-T3

资历状况

COMMERCIAL

配置

SINGLE WITH BUILT-IN DIODE

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-251AA

漏极-源极导通最大电阻

0.07 Ω

DS 击穿电压-最小值

55 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR