Isahaya Electronics Corporation RT3J55M
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RT3J55M详情
Isahaya Electronics Corporation RT3J55M重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
6
晶体管元件材料
SILICON
Part Life Cycle Code
接触制造商
Ihs Manufacturer
ISAHAYA ELECTRONICS CORP
Package Description
SMALL OUTLINE, R-PDSO-G6
Drain Current-Max (ID)
0.1 A
Number of Elements
2
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
ECCN 代码
EAR99
端子位置
DUAL
终端形式
鸥翼
Reach合规守则
unknown
JESD-30代码
R-PDSO-G6
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
操作模式
增强型MOSFET
晶体管应用
SWITCHING
极性/通道类型
P-CHANNEL
DS 击穿电压-最小值
50 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
0.15 W
环境耗散-最大值
0.15 W
RT3J55M拓展信息
Isahaya Electronics Corporation
Isahaya Electronics Corporation
Isahaya Electronics Corporation
Isahaya Electronics Corporation
Isahaya Electronics Corporation
Isahaya Electronics Corporation
Isahaya Electronics Corporation
Isahaya Electronics Corporation
Isahaya Electronics Corporation
Isahaya Electronics Corporation








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