ISSI, Integrated Silicon Solution Inc IS46DR16160B-25DBLA2
- 收藏
- 对比
IS46DR16160B-25DBLA2
1266-IS46DR16160B-25DBLA2
存储器
84-TFBGA
大陆
立即发货

IC DRAM 256M PARALLEL 84TWBGA
--最小包装量--
IS46DR16160B-25DBLA2详情
ISSI, Integrated Silicon Solution Inc IS46DR16160B-25DBLA2重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
8 Weeks
安装类型
表面贴装
包装/外壳
84-TFBGA
Memory Types
Volatile
Usage Level
Automotive grade
操作温度
-40°C~105°C TA
包装
Tray
零件状态
活跃
湿度敏感性等级(MSL)
3 (168 Hours)
电压 - 供电
1.7V~1.9V
内存大小
256Mb 16M x 16
时钟频率
400MHz
访问时间
400ps
内存格式
DRAM
内存接口
Parallel
写入周期时间 - 字符、页面
15ns
RoHS状态
ROHS3 Compliant
IS46DR16160B-25DBLA2拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc








哦! 它是空的。