ISSI, Integrated Silicon Solution Inc IS61WV25616BLL-10BLI-TR
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IS61WV25616BLL-10BLI-TR
1266-IS61WV25616BLL-10BLI-TR
存储器
48-TFBGA
大陆
立即发货

IC SRAM 4M PARALLEL 48MINIBGA
1最小包装量--
IS61WV25616BLL-10BLI-TR详情
ISSI, Integrated Silicon Solution Inc IS61WV25616BLL-10BLI-TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
8 Weeks
安装类型
表面贴装
包装/外壳
48-TFBGA
表面安装
YES
引脚数
48
Memory Types
Volatile
Current - Supply (Nom)
45mA
Usage Level
Industrial grade
操作温度
-40°C~85°C TA
包装
Tape & Reel (TR)
零件状态
活跃
湿度敏感性等级(MSL)
2 (1 Year)
终止次数
48
电压 - 供电
2.4V~3.6V
端子位置
BOTTOM
端子间距
0.75mm
电源
2.5/3.3V
内存大小
4Mb 256K x 16
端口的数量
1
内存格式
SRAM
内存接口
Parallel
输出特性
3-STATE
内存宽度
16
写入周期时间 - 字符、页面
10ns
地址总线宽度
18b
密度
4 Mb
待机电流-最大值
0.009A
I/O类型
COMMON
同步/异步
Asynchronous
字长
16b
待机电压-最小值
2V
辐射硬化
无
RoHS状态
ROHS3 Compliant
IS61WV25616BLL-10BLI-TR拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







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