ITT CB1-20-11SC

包装/外壳

SO-8L

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

30 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

65.7 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 16 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

98 S

Channel Mode

Enhancement

Manufacturer

Vishay

Brand

Vishay Semiconductors

Qg - Gate Charge

70 nC

Rds On - Drain-Source Resistance

2.3 mOhms

RoHS

Details

Typical Turn-Off Delay Time

64 ns

Id - Continuous Drain Current

35.4 A

包装

MouseReel

子类别

MOSFETs

技术

Si

通道数量

1 Channel

上升时间

12 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET