IXYS IXFP36N60X3

包装/外壳

TO-220-3

安装类型

通孔

供应商器件包装

TO-220

厂商

IXYS

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

446W (Tc)

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

23 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

446 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

IXYS

Brand

IXYS

Qg - Gate Charge

29 nC

Tradename

HiPerFET

Rds On - Drain-Source Resistance

90 mOhms

RoHS

Details

Typical Turn-Off Delay Time

45 ns

Id - Continuous Drain Current

36 A

操作温度

-55°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

90mOhm @ 18A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 2.5mA

输入电容(Ciss)(Max)@Vds

2030 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

29 nC @ 10 V

上升时间

8 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET