IXYS IXTA220N04T2

包装/外壳

TO-263-3

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

15 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

360 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.056438 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

SMD/SMT

Forward Transconductance - Min

40 S

Channel Mode

Enhancement

Manufacturer

IXYS

Brand

IXYS

Qg - Gate Charge

112 nC

Tradename

HiPerFET

Rds On - Drain-Source Resistance

2.8 mOhms

Typical Turn-Off Delay Time

31 ns

Id - Continuous Drain Current

220 A

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

IXTA220N04T2

Part Life Cycle Code

活跃

Ihs Manufacturer

LITTELFUSE INC

Risk Rank

5.32

系列

IXTA220N04

包装

Tube

类型

TrenchT2 Power MOSFET

子类别

MOSFETs

技术

Si

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

not_compliant

配置

Single

通道数量

1 Channel

上升时间

21 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

10.41 mm

高度

4.83 mm

长度

9.65 mm