IXYS IXTH220N20X4

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

ISO TO-247-3

厂商

IXYS

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

220A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

800W (Tc)

Vds - Drain-Source Breakdown Voltage

200 V

Typical Turn-On Delay Time

30 ns

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

800 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Forward Transconductance - Min

90 S

Channel Mode

Enhancement

Manufacturer

IXYS

Brand

IXYS

Qg - Gate Charge

157 nC

Rds On - Drain-Source Resistance

5.5 mOhms

RoHS

Details

Typical Turn-Off Delay Time

87 ns

Id - Continuous Drain Current

220 A

系列

Ultra X4

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

5.5mOhm @ 110A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 250μA

输入电容(Ciss)(Max)@Vds

12300 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

157 nC @ 10 V

上升时间

15 ns

漏源电压 (Vdss)

200 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET