IXYS IXTP170N13X4

包装/外壳

TO-220-3

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

135 V

Id - Continuous Drain Current

170 A

Rds On - Drain-Source Resistance

6.3 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Qg - Gate Charge

105 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

480 W

Channel Mode

Enhancement

Tradename

HiPerFET

Fall Time

7 ns

Factory Pack QuantityFactory Pack Quantity

50

Typical Turn-Off Delay Time

46 ns

Typical Turn-On Delay Time

26 ns

Unit Weight

0.068784 oz

包装

Tube

系列

X4-Class

配置

Single

通道数量

1 Channel

上升时间

8 ns

晶体管类型

1 N-Channel