IXYS IXTQ34N65X2M

安装类型

通孔

包装/外壳

TO-3P-3, SC-65-3

供应商器件包装

TO-3P

厂商

IXYS

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

43W (Tc)

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

30 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

43 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Forward Transconductance - Min

20 S

Channel Mode

Enhancement

Manufacturer

IXYS

Brand

IXYS

Qg - Gate Charge

54 nC

Tradename

HiPerFET

Rds On - Drain-Source Resistance

96 mOhms

RoHS

Details

Typical Turn-Off Delay Time

68 ns

Id - Continuous Drain Current

34 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

96mOhm @ 17A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 250μA

输入电容(Ciss)(Max)@Vds

3000 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

54 nC @ 10 V

上升时间

48 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET