Jilin Sino-Microelectronics JCS4N60RB
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JCS4N60RB
1604-JCS4N60RB
晶体管 - FET,MOSFET - 单个
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600V 4A 1.7Ω@10V,2A 165.56W 4V@250uA 1 N-Channel DPAK MOSFETs ROHS
1最小包装量--
JCS4N60RB详情
Jilin Sino-Microelectronics JCS4N60RB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Package
Tape & Reel (TR)
Total Gate Charge (Qg@Vgs)
13.3nC@10V
Input Capacitance (Ciss@Vds)
702pF@25V
Reverse Transfer Capacitance (Crss@Vds)
2.69pF@25V
Gate Threshold Voltage (Vgs(th)@Id)
4V@250uA
Power Dissipation (Pd)
165.56W
Drain Source On Resistance (RDS(on)@Vgs,Id)
1.7Ω@10V,2A
Drain Source Voltage (Vdss)
600V
RoHS
true
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
4A
JCS4N60RB拓展信息
Jilin Sino-Microelectronics
A Power microelectronics
A Power microelectronics
WPMtek(Wei Pan Microelectronics)
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
WUXI UNIGROUP MICRO
Shandong Jingdao Microelectronics








哦! 它是空的。